Shouqiang Lai | Optical Materials | Best Researcher Award

Dr. Shouqiang Lai | Optical Materials | Best Researcher Award

Dr. Shouqiang Lai, Xiamen University, China

Dr. Shouqiang Lai (b. October 1995, Longyan, Fujian) is a researcher specializing in III-V nitride semiconductor materials and devices, particularly in Mini/Micro-LED technology. He holds a prominent role in various funded projects, including the development of new MicroLED devices for communication and display applications. Dr. Lai has published numerous papers in high-impact journals and holds multiple patents related to LED and Micro-LED technologies. His expertise encompasses semiconductor fabrication, micro-nano processing, and optoelectronic performance testing. Dr. Lai is also skilled in advanced laser cutting processes for Mini/Micro-LEDs, contributing to cutting-edge technology in the industry. πŸ’‘πŸ”¬πŸ“ˆ

Publication Profile

Scopus

Research Experience

Dr. Shouqiang Lai has been a key member in several significant research projects during his graduate studies. He contributed to the National Natural Science Foundation project on the preparation and performance analysis of new MicroLED devices for communication and display applications, with a funding of Β₯480,000. He also participated in the Fujian Provincial Key Talent Program, focusing on high-efficiency, low-crosstalk Micro-LED technology with Β₯300,000 in funding. Additionally, Dr. Lai worked on the Xiamen City Major Project for Micro-LED display technology development (Β₯16.33 million) and collaborated on various industry-university projects aimed at advancing semiconductor technology. πŸ’‘πŸ“Š

 

Scientific Achievements

Dr. Shouqiang Lai has an impressive publication record, with 13 peer-reviewed articles as the primary or corresponding author and five more under review. His high-impact research has been featured in prestigious journals like IEEE Transactions on Electron Devices, Opto-Electronic Advances, and Advanced Science. His work focuses on optimizing the efficiency of green and blue InGaN/GaN micro-LEDs, making significant contributions to display and optoelectronic technologies. Dr. Lai has also made notable contributions to five patents, showcasing his innovative approach in semiconductor and LED technologies. πŸŒŸπŸ’‘

 

Research Focus

Dr. Shouqiang Lai’s research primarily revolves around the optimization and performance enhancement of micro-LED and related optoelectronic devices. His key focus areas include improving the efficiency, modulation bandwidth, and overall performance of green and blue InGaN/GaN micro-LEDs, particularly for applications in displays and visible light communication. He also investigates the impacts of passivation techniques, such as atomic layer deposition (ALD), on the performance of LED devices. Additionally, Dr. Lai explores innovative approaches to enhancing the electro-optical performance of AlGaN-based ultraviolet LEDs. His work holds significant implications for the future of semiconductor and optoelectronic technologies. πŸŒŸπŸ”‹

 

Publication Top Notes

  • “Impacts of the area-ratios of V-pit for the optoelectronic performance of green micro-LEDs,” Liu, S., Li, D., Lai, C., Lai, S., Wu, T. Journal of Alloys and Compounds, 2025, 0 citations πŸ“…πŸ”‹
  • “Experimental investigation of high-speed WDM-visible light communication using blue, green, and red InGaN Β΅LEDs,” Lu, T., Dai, Y., Lee, T.-Y., Kuo, H.-C., Wu, T. Optics Letters, 2024, 0 citations πŸŒπŸ’‘
  • “Enhanced Performance of AlGaN-Based DUV-LEDs With Passivated Nano-Hole Arrays,” Li, Z., Shen, M.-C., Lai, S., Chen, Z., Wu, T. IEEE Transactions on Electron Devices, 2024, 0 citations πŸ’‘πŸ”¬
  • “Enhancing the performance of AlGaN-based DUV-LEDs with multifocal laser stealth dicing,” Shen, M.-C., Chen, J., Tseng, M.-C., Chen, Z., Wu, T. Optics Express, 2024, 0 citations πŸŒŸπŸ”¬
  • “The impacts of SiO2 atomic-layer-deposited passivation layer thickness on GaN-based green micro-LEDs,” Deng, Y., Chen, J., Li, S., Chen, Z., Wu, T. Semiconductor Science and Technology, 2024, 2 citations βš‘πŸ”§
  • “Improving Modulation Bandwidth and Detection Performance of Green Micro-LEDs with Pre-Strained Structure at Positive Bias,” Lu, T., Lai, S., Dai, Y., Chen, Z., Wu, T. IEEE Electron Device Letters, 2024, 3 citations πŸ™οΈπŸ”Œ
  • “Improving optoelectronic performance and modulation bandwidth of green Β΅-LEDs via a compound pre-strained strategy,” Lu, T., Lee, T.-Y., Lai, S., Kuo, H.-C., Wu, T. Optics Letters, 2024, 5 citations πŸ’‘πŸ“ˆ
  • “Impacts of p-AlGaN Electron Blocking Layer for the Performance of Low Current Injected Green GaN-Based Micro-LEDs,” Lai, C.-H., Yang, D., Lin, Z.-M., Lai, S., Lu, Y. IEEE Transactions on Electron Devices, 2024, 0 citations βš‘πŸ”§
  • “Enhancing the Efficiency of Green micro-LEDs by Optimizing p-Electrode Contact Area Ratios,” Guo, W.-A., Liu, S.-B., Lu, T.-W., Chen, Z., Wu, T.-Z. IEEE Transactions on Electron Devices, 2024, 0 citations πŸ’‘πŸ”Œ
  • “Investigations on Electro-Optical and Photoelectric Detection Performance of GaN-Based micro-LEDs by Removing p-AlGaN Electron-Blocking Layer,” Lu, T.-W., Yang, D.-K., Dai, Y.-R., Chen, Z., Wu, T.-Z. IEEE Transactions on Electron Devices, 2024, 1 citation βš™οΈπŸ“ˆ

Conclusion

Dr. Shouqiang Lai is a highly accomplished researcher with significant contributions to semiconductor materials and Mini/Micro-LED technologies. His prolific output, innovative patents, and leadership in major research projects make him a strong candidate for the Best Researcher Award.