Dr. Kun-Lin Lin |Materials analysis | Best Researcher Award
Research Fellow, Kun-Lin Lin, Research Fellow, Taiwan Semiconductor Research Institute,Taiwan
Kun-Lin Lin is a strong candidate for the Best Researcher Award, particularly in materials science, semiconductor technology, and advanced characterization techniques. His high-quality publications, innovative methodologies, and industrial collaborations make him a leading researcher in his field. However, further leadership roles, industry impact, and major award recognitions could strengthen his profile.
Education :
Kun-Lin Lin received his M.S. and Ph.D. degrees in Materials Science and Engineering from National Chiao-Tung University, Hsinchu, Taiwan, in 2001 and 2005, respectively. His academic background provided a strong foundation in materials characterization and semiconductor research, shaping his expertise in the field.
EXPERIENCE:
From 2006 to 2008, Kun-Lin Lin worked as a Postdoctoral Researcher at National Chiao-Tung University and National Taiwan University of Science and Technology, where he focused on microstructural characterization of metal/ceramic interfaces using transmission electron microscopy (TEM). Between 2008 and 2010, he worked in the Physical Failure Analysis Department at Inotera Memories Inc., specializing in TEM analysis of dynamic random-access memory (DRAM). Since May 2010, he has been an Associate Researcher at the National Nano Device Laboratories, which was later renamed the Taiwan Semiconductor Research Institute in 2018, where he continues to contribute to advanced materials characterization.
Skills:
Kun-Lin Lin possesses extensive expertise in TEM analysis for materials characterization, focusing on semiconductor materials and device interfaces. His technical skills include Differential Hall Effect Metrology (DHEM), Atom Probe Tomography (APT), and microstructural characterization of doped semiconductors. His proficiency in advanced microscopy techniques has significantly contributed to the understanding of semiconductor materials.
Awards:
Throughout his career, Kun-Lin Lin has been recognized for his contributions to materials science and semiconductor research. He is a peer reviewer for prestigious journals, including the Journal of Applied Physics, Materials & Design, Intermetallics, and Ceramic International. His research has also been featured in high-impact journals, demonstrating his influence in the field.
Research Focus:
His research primarily revolves around microstructural characterization of doped semiconductors, with a particular emphasis on Differential Hall Effect Metrology (DHEM) and Atom Probe Tomography (APT). His work has advanced the understanding of electrical properties in semiconductor materials, contributing to the development of high-performance electronic devices.
Publication :
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Electrical properties of doped silicon without P-N junction using micro-mesa shrinking patterns and differential Hall effect metrology
- Authors: C.Y. Yang, C. Chang, Y.C.S. Wu, A. Joshi, B.M. Başol
- Journal: Materials Science in Semiconductor Processing
- Year: 2025
- Citations: 0
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Carrier Activation at End-of-Range (EOR) Defects and Grain Boundaries in Boron-Doped Silicon
- Authors: Y. Li, Y.C. Yang, T. Chou, Y. Hsu, K. Lin
- Journal: Journal of Electronic Materials
- Year: 2025
- Citations: 0
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Material Properties of n-Type β-Ga2O3 Epilayers with In Situ Doping Grown on Sapphire by Metalorganic Chemical Vapor Deposition (Open Access)
- Authors: F.G. Tarntair, C. Huang, S. Rana, P. Liu, R. Horng
- Journal: Advanced Electronic Materials
- Year: 2025
- Citations: 7
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Lattice Boundary Enhancement on Thermoelectric Behaviors of Heavily Boron-Doped Silicon for Energy Harvesting: Electrical versus Thermal Conductivity (Open Access)
- Authors: S. Yu Tsai, P.H. Tseng, C. Chen, Y. Lai, F. Ko
- Journal: Advanced Materials Interfaces
- Year: 2024
- Citations: 1
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Scalable approach for growing hexagonal boron nitride on silicon and its role in III-nitride van der Waals epitaxy
- Authors: M.A. Rather, S. Hsu, C.C. Lin, K.Y. Lai, J.I. Chyi
- Journal: Journal of Applied Physics
- Year: 2024
- Citations: 0
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Investigation of Gallium Nitride Based HEMTs with Thermal Dissipation (Open Access)
- Authors: H. Zheng, W.A. Lee Sanchez, K. Lin, R. Horng
- Journal: Advanced Electronic Materials
- Year: 2024
- Citations: 1
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Complementary use of atom probe tomography (APT) and differential hall effect metrology (DHEM) for activation loss in phosphorus-implanted polycrystalline silicon
- Authors: K. Lin, F. Lee, Y. Chen, Y. Tseng, H. Yen
- Journal: Scripta Materialia
- Year: 2024
- Citations: 3
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Formation of quaternary Zn(AlxGa1−x)2O4 epilayers driven by thermally induced interdiffusion between spinel ZnGa2O4 epilayer and Al2O3 substrate (Open Access)
- Authors: S. Bairagi, J. Chang, F.G. Tarntair, K. Järrendahl, C.L. Hsiao
- Journal: Materials Today Advances
- Year: 2023
- Citations: 4
Based on his research contributions, Kun-Lin Lin is a highly suitable candidate for the Best Researcher Award. While his technical expertise, publication record, and industrial experience make him a strong contender, enhancing his leadership roles, securing high-profile awards, and expanding his research’s industrial impact would further solidify his position as a top researcher.